Conference Agenda

Session

S 7: Thermal Characterization Methods 2

Time:

Friday, 18/Sept/2026:

9:15am - 10:35am

Presentations

Transient Thermal Response in AlGaN/GaN HEMT Transistor: Influence of Dissipated Power on Thermal Time Constants

Anass Jakani¹, Mohamed Bouslama¹, Jean-Claude Jacquet¹, Benoit Lambert², Jean-Christophe Nallatamby³, Raphael Sommet³, Gildas Gauthier¹

¹III-V Lab (Thales), France; ²UMS - United Monolithic Semiconductors, France; ³XLIM, France

Electrothermal Characterization and Simulation of GaAs Schottky Diodes for Terahertz (THz) Applications

N'doua Luc Arnaud Kakou¹, Nicolas Zerounian², Frédéric Aniel², Raphael Sommet¹

¹XLIM CNRS, France; ²C2N CNRS, France

Submicron Ultrafast Raman Thermography System for Power Semiconductor and TGV Inspection

Jung-Hoon Song^1,2, Youngboo Moon^1,3, Seungyoung Lim¹, Gyeong Eun Choi¹, Jaesun Kim¹, Byongjin Ma⁴

¹AccuOptotec Col,, Korea, Republic of (South Korea); ²Kongju National University, Korea, Republic of (South Korea); ³UJL Co., Korea, Republic of (South Korea); ⁴4Korea Electronics Technology Institute, Korea, Republic of (South Korea)

Novel Methods to Address the Time Dependence of TSPs in the Thermal Testing of Power Devices

Sándor Ress^1,2, Márta Rencz¹, Gábor Farkas², Zoltán Sárkány²

¹Budapest University of Technology and Economics, Hungary; ²SIEMENS DI SW, Budapest, Hungary