Transient Thermal Response in AlGaN/GaN HEMT Transistor: Influence of Dissipated Power on Thermal Time Constants

Anass Jakani¹, Jean-Claude Jacquet², Mohamed Bouslama², Benoit Lambert³, Jean-Christophe Nallatamby⁴, Raphael Sommet⁴, Gildas Gauthier²

1: Thales Research & Technology; 2: III-V Lab (Thales), France; 3: UMS - United Monolithic Semiconductors, France; 4: XLIM, France

Electrothermal Characterization and Simulation of GaAs Schottky Diodes for Terahertz (THz) Applications

N'Doua Luc Arnaud Kakou¹, Nicolas Zerounian², Frédéric Aniel², Raphael Sommet¹

1: XLIM CNRS, France; 2: C2N CNRS, France

Submicron Ultrafast Raman Thermography System for Power Semiconductor and TGV Inspection

Jung-Hoon Song^1,2, Youngboo Moon^1,3, Seungyoung Lim¹, Gyeong Eun Choi¹, Jaesun Kim¹, Byongjin Ma⁴

1: AccuOptotec Col,, Korea, Republic of (South Korea); 2: Kongju National University, Korea, Republic of (South Korea); 3: UJL Co., Korea, Republic of (South Korea); 4: 4Korea Electronics Technology Institute, Korea, Republic of (South Korea)

Novel Methods to Address the Time Dependence of Temperature Sensitive Parameters in Thermal Testing

Sándor Ress^1,2, Márta Rencz¹, Gábor Farkas², Zoltán Sárkány²

1: Budapest University of Technology and Economics, Hungary; 2: SIEMENS DI SW, Budapest, Hungary