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7.A: Thermal Management in Power Electronics 1
Time:
Friday, 26/Sept/2025:
10:00am - 11:20am
Session Chair: John Janssen , NXP Semiconductors
Location: Aula Magna
Presentations
Electrothermal Performance Enhancement of Silicon Carbide Gate-All-Around MOSFETs Using a Ferroelectric Gate Stack
Vincenzo Terracciano 1 , Alessandro Borghese1 , Marco Boccarossa1 , Andrea Irace1 , Giovanni Salvatore2 , Luca Maresca1
1 University of Naples Federico II, Italy; 2 Ca’ Foscari University of Venice, Italy
Dielectric Liquid Cooling of 2.0 kV SiC MOSFET Power Module Using Jet Impingement and Pumped Immersion Flow
Till Huesgen, Johann Renner , Balasubramanian Vaidyanathan, Vladimir Polezhaev
Hochschule Kempten - University of Applied Sciences, Germany
A Comparative Analysis of the Thermal Performance of DBC and Novel IMS Substrates of IGBT Devices
János Hegedüs1 , Gusztáv Hantos1 , Gyula Lipák1 , Andrea Reolon2 , András Poppe1 , Ferenc Ender 1
1 Budapest University of Technology and Economics, Hungary; 2 Serigroup, Italy
Multiphysics Simulations for IGBT Power Semiconductor Module Cooling
Péter Pálovics 1 , Eeli Kerttula2 , Atte Hoffrén2 , Joonas Leppänen2 , Ferenc Ender1
1 Budapest University of Technology and Economics, Budapest, Hungary; 2 ABB Oy, Motion, Technology Collaboration Office, Helsinki, Finland