Study of Breakdown Mechanisms in GaN/AlGaN HEMTs Under Various Short Circuit Tests Using p-GaN Schottky Gate Current as Thermal Sensitive Parameter

Christale Crouard^1,2, Mickael Rouch¹, Jonathan Godillon¹, Julio Brandelero¹, Patrick Tounsi²

¹STMicroelectronics, France; ²LAAS-CNRS, France

Toward Real-Time Junction Temperature Estimation with a Physics-Informed Attention LSTM

Alessandro Varaldi¹, Maurizio Tranchero², Lorenzo Giraudi², Claudio Genta², Marco Vacca¹

¹Politecnico di Torino, Italy; ²Ideas & Motion

K-factor Calibration Issues of IGBTs

Gusztáv Hantos, János Hegedüs, Gyula Lipák, András Poppe, Ferenc Ender

Budapest University of Technology and Economics, Hungary

Development of a Surrogate Model for a Phase Change Material Heat Sink for Thermal Buffering of Power Electronics

Maité Goderis^1,2, Jana Rogiers^1,2, Michiel De Paepe¹, Wito Plas^1,2, Hendrik Vansompel^1,2, Michel De Paepe^1,2,3

¹Ghent University, Department of Electromechanical, Systems and Metal Engineering, Sint-Pietersnieuwstraat 41, Ghent, 9000, Belgium; ²FlandersMake@UGent – Core lab MIRO, Ghent, 9000, Belgium; ³University of Cape Town, Department of Mechanical Engineering, Private Bag X3, Rondebosch 7701, South Africa