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8: Thermal Management in Power Electronics 2
Time:
Friday, 26/Sept/2025:
11:40am - 1:00pm
Session Chair: András Poppe , Budapest University of Technology and Economics
Location: Aula Magna
Presentations
Study of Breakdown Mechanisms in GaN/AlGaN HEMTs Under Various Short Circuit Tests Using p-GaN Schottky Gate Current as Thermal Sensitive Parameter
Christale Crouard 1,2 , Mickael Rouch1 , Jonathan Godillon1 , Julio Brandelero1 , Patrick Tounsi2
1 STMicroelectronics, France; 2 LAAS-CNRS, France
Toward Real-Time Junction Temperature Estimation with a Physics-Informed Attention LSTM
Alessandro Varaldi 1 , Maurizio Tranchero2 , Lorenzo Giraudi2 , Claudio Genta2 , Marco Vacca1
1 Politecnico di Torino, Italy; 2 Ideas & Motion
K-factor Calibration Issues of IGBTs
Gusztáv Hantos , János Hegedüs, Gyula Lipák, András Poppe, Ferenc Ender
Budapest University of Technology and Economics, Hungary
Development of a Surrogate Model for a Phase Change Material Heat Sink for Thermal Buffering of Power Electronics
Maité Goderis 1,2 , Jana Rogiers1,2 , Michiel De Paepe1 , Wito Plas1,2 , Hendrik Vansompel1,2 , Michel De Paepe1,2,3
1 Ghent University, Department of Electromechanical, Systems and Metal Engineering, Sint-Pietersnieuwstraat 41, Ghent, 9000, Belgium; 2 FlandersMake@UGent – Core lab MIRO, Ghent, 9000, Belgium; 3 University of Cape Town, Department of Mechanical Engineering, Private Bag X3, Rondebosch 7701, South Africa
