Conference Programme

The overview and detailed programme is posted below.

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Overview
Session
J-01: Symp J
Time:
Monday, 19/Jun/2017:
1:30pm - 3:30pm

Session Chair: Pooi See Lee, Nanyang Technological University
Location: Rm 334

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Presentations
1:30pm - 2:00pm
Invited

New Strategies for Metal Oxide Based Materials and Devices

Elvira FORTUNATO, Rodrigo MARTINS

Faculty of Sciences and Technology of New University of Lisbon, Portugal

10 years ago it was pure science fiction the notion of fully transparent, flexible and conformable displays, like those used by T. Cruise in the Minority Report movie fully based on materials away from silicon! Thanks to the Hollywood vision and the hard work of scientists this is now a reality. After the huge success and revolution of transparent electronics where we must highlight the low process temperatures that turn possible the use of low cost eco-friendly materials and substrates such biopolymer or paper, where CENIMAT is pioneer and with the worldwide interest in displays/smart interfaces where metal oxide thin films have proved to be truly semiconductors, display backplanes have already gone commercial due to the huge investment of several high profile companies such: SHARP, SAMSUNG, LG, BOE, in a very short period of time. Recently IDTechEx estimated that 8 km sqr of metal oxide-sbased backplanes will be used in the OLED and LCD industry by 2024, enabling a 16 billion USD market at the display module level alone. In this presentation we will show some of the developments done in terms of metal oxide based-TFTs as well as TCOs produced either by conventional PVD techniques as well as by new low temperature solution processes.

We can anticipate that the metal oxide based industry will be in the near future a so-called multi billion euro market similar to what is observed with the pharmaceutical industry, due to the number of different applications that can serve, ranging from information technology, biotechnology/life sciences and energy to food/consumer products.


2:00pm - 2:30pm
Invited

Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

Husam ALSHAREEF, Zhenwei WANG, Fwzah ALSHAMRI

King Abdullah University of Science & Technology, Saudi Arabia

The field of transparent electronics based on metal oxide conductors and semiconductors has attracted much attention recently because it is expected that fabrication of fully transparent devices will not only enable higher performance displays, but will also usher in a new era of transparent electronics and sensors. However, work on fully transparent circuits has almost exclusively relied on indium tin oxide (ITO), indium doped zinc oxide (IZO) or other indium-containing oxides. It is well-known that indium supplies have been a constant concern for the display and touch screen industries, thus it is necessary to find alternative transparent oxides.

Here we demonstrate an all-oxide robust processe for fully-transparent electronics with the following features: (1) A unique multilayer semiconductor channel composed of alternating layers of hafnium oxide (HfO2) and zinc oxide (ZnO), which gives significant improvement in the electrical stability of our devices; (2) entirely indium-free transistors (gate, SD, channel, dielectric are all indium-free); (3) all-oxide, truly fully-transparent devices and circuits (no metals, only transparent oxide conductors and semiconductors); (4) single deposition technique (ALD) for all materials, which means uniform and conformal deposition is possible on both planar and three-dimensional device architectures; (5) maximum process temperature of 160C which allowed us to demonstrate the process on both rigid glass and flexible substrates.

References:

[1] P. K. Nayak, Z. Wang, H.N. Alshareef, Advanced Materials: DOI: 10.1002/adma.201600503

[2] Z. Wang, J.A. Caraveo, P. Nayak, and H.N. Alshareef, Advanced Materials: DOI: 10.1002/adma.201503080


2:30pm - 3:00pm
Invited

Ultraflexible Opto-Electrical Devices

Kenjiro FUKUDA1,2, Hiroaki JINNO1,3, Xiaomin XU1, Sungjun PARK1, Tomoyuki YOKOTA3, Takao SOMEYA1,3

1RIKEN, Japan; 2Japan Science and Technology Agency (JST), Precursory Research for Embryonic Science and Technology (PRESTO), Japan; 3The University of Tokyo, Japan

Novel electrical opto-eletrical devices including include solar cells [1] and light-emitting diodes (LEDs) [2] are recently being developed aggressively. The combination of ultra-flexibility and large-area fabrication technologies[3], such electronics will open novel application such as imperceptible displays attached onto human bodies[4] or large-area power source systems with ultra-high power-per-weight[5].

In this talk, we will show our recent progress of ultraflexible organic photovoltaics and LEDs which possess high mechanical robustness and environmental stabilities. Our ultraflexible devices consists of ultra-thin (1-μm-thick) substrates with Indium Tin Oxide (ITO) as transparent electrodes, and organic semiconducting layers. I will show the electrical performances and mechanical robustness of our opto-electrical devices and discuss about the requirements for transparent electrodes.

References:

[1] M. Kaltenbrunner et al., Nat. Commun. 2012, 3, 770.

[2] M. S. White et al., Nat. Photonics 2013, 7, 811.

[3] K. Fukuda, et al., Nat. Commun. 2014, 5, 1689.

[4] T. Yokota, et al., Sci. Adv. 2016, 2, e1501856.

[5] M. Kaltenbrunner et al., Nat. Mater. 2015, 14, 1032.


3:00pm - 3:15pm
Oral

Transparent Conducting Electrode Fabrication Using a Combination of Spin Coating and Thermal Evaporation

Sonia SHARMA, Shashi Kiran BANKALA, Krishna KUMAR, Parasuraman SWAMINATHAN

Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, India

In this work, we develop a general process to improve the performance of transparent conducting electrodes by combining spin coating and thermal evaporation. We show that this approach leads to an improved electrical conductivity, without a significant loss of transparency, leading to an increase in the overall figure of merit. We use this combined approach to synthesize aluminium deposited zinc oxide (ZnO). In the first step, to prepare the spin coated ZnO layer, a slurry was prepared by ball milling commercial ZnO followed by dispersion in glycerol with a stabilizer. Thin films of ZnO were then spin coated, dried, and furnace annealed. Aluminium was then deposited on these films by thermal evaporation followed by rapid thermal annealing. Transmittance and resistivity of the ZnO and Al-ZnO thin films were measured in order to calculate the figure of merit and the oxidation state of the aluminium was characterized using x-ray photoelectron spectroscopy. The films produced by this combination approach were compared with Al doped ZnO, prepared by conventional spark plasma sintering method1 and then spin coated using the same process. The spin coating and thermal evaporation technique can be generalized to other metal oxides-metal systems as well and offers a simple approach to improve optoelectronic properties.

Reference:

[1] Sonia Sharma, Raghavendar Bayikadi, and P. Swaminathan, "Spark plasma sintering route to synthesize aluminium doped zinc oxide", RSC Adv. 6, 86586 (2016).


3:15pm - 3:30pm
Oral

Design and Growth of High Conductivity Wide Band-gap ZnMgGaO Films by RF Magnetron Sputtering

Ba Cuong HOANG, Byung-Teak LEE

Chonnam National University, South Korea

The wide band-gap ZnMgGaO films have drawn a great attention as the transparent conductive materials for the short-wavelength optoelectronic devices. The conductivity of the films decreases markedly at higher Mg composition, however, which limits its practical application. In this work, we design and fabricate high conductivity wide band-gap ZnMgGaO films by RF magnetron. It is demonstrated that the formation of acceptor-like compensating defects such as Zn vacancies and/or other complexes increases with the increasing Mg content, decreasing the free electron concentration and the mobility through the ionized impurity scattering. More importantly, it was observed that the post-growth annealing in the Zn vapor effectively increased the free electron concentration. The acceptor-like defects within the films annihilated during the annealing in Zn vapor, resulting in the films with a resistivity as low as 10-3 W.cm and a wide band-gap energy of 4.5 eV. Further studies are in progress to understand defect chemistry of the films and the mechanisms affecting the phenomena, and the results will be discussed in detail during the presentation.



 
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